孟祥提
个性化签名
- 姓名:孟祥提
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学术头衔:
博士生导师
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学科领域:
核科学技术
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孟祥提:男,1946年 2月生,安徽萧县人。在清华大学核能技术设计研究院工作,教授,博士生导师,室主任。70 年清华大学工程物理系毕业,后分获清华大学核新材料和核材料专业硕士和博士学位。国家自然科学基金委员会项目、教育部科技成果鉴定和科技进步奖、高等学校科学技术评审人,全国学位与研究生教育评估人,国家重点新产品计划、北京市火炬计划和创新基金项目评审人。外文核心期刊和中文核心期刊评审人。北京知识银行评审专家委员会成员。中国核学会和材料会员、北京物理学会会员、中国科协会员;中国电子学会高级会员。曾为美国科技进步协会国际特邀会员(AAAS),纽约科学院会员,国际英文刊物 “Defect and Diffusion Forum ”和“Solid State Phenomena” 杂志编委。
所负责和参加的大功率晶闸管和探测器用NTD Si科研项目获国家科技进步二等奖,国家教委科技进步一等奖,北京市技术开发优秀项目一等奖,冶金部科技成果二等奖,中国有色金属总公司科技成果三等奖;“单晶硅中氢的行为和与氢有关的缺陷” 获国家教委科技进步一等奖;“中子辐照硅中的缺陷及其与氢、氧杂质的相互作用” 获教育部科技进步二等奖; 国家“七五”攻关项目“半绝缘砷化镓单晶”获国家重点科技攻关项目阶段成果奖以及国家计委、国家科委和财政部科技攻关荣誉证书。两次获清华大学基础研究奖,均达到国际先进水平。获SCI论文数全国个人前10名奖,清华大学梅贻琦学术论文奖特等和一等奖,清华大学“曹光彪高科技发展基金奖”突出个人成果奖。参加的“10兆瓦高温气冷试验反应堆”项目获教育部科技进步一等奖。
在国内外学术刊物“物理评论”、“固态通讯”、“应用物理杂志”、“应用物理A”,“哲学杂志”、“凝聚态物理杂志”,“物理快讯”、“核仪器方法物理研究”,“物理文稿”,“应用物理杂志”,“中国科学”(英文版)等及会议上发表论文130多篇,其中列入SC1的30多篇、EI的30多篇。
曾在希腊Thessaloniki市Aristotle大学核物理系、奥地利Graz技术大学核物理研究所、西德科学院Max-Planck 固体物理研究所( Stuttgart)、意大利Trento大学物理系、俄罗斯莫斯科库尔恰托夫原子能研究院和叶卡杰林堡分院动力工程发展研究所作访问教授。
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3597
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成果阅读
914
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成果数
15
孟祥提, Xiang-Ti Meng, Ji-Wu Xiong, Guo-Gang Qin and Yong-Chang Du
Physica Scripta. Vol. 52, 108-112, 1995,-0001,():
-1年11月30日
A new Si-H infrared absorption peak at 2016cm-1 is found to be related to the hydrogen-defect shallow donors apart from the 2162cm-1 peak, indicating that the shallow donors do not correspond to only one kind of defect structure. The micro-structure of th
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【期刊论文】Defect annealing of neutron-irradiated silicon crystals
孟祥提, MENG XIANG-TI, ZUO KAI-FEN
JOURNAL OF MATERIALS SCIENCE 30 (1995) 4195-4198,-0001,():
-1年11月30日
Doppler broadening positron annihilation spectroscopy has been used to investigate the effects of neutron integrated flux and hydrogen on annealing behaviour of defects in silicon crystals. The concentration of neutron radiation defects was estimated, act
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【期刊论文】Positron-trap centers in neutron-irradiated silicon containing hydrogen
孟祥提, X.T. Meng, A. Zecca, R.S. Brusa
Appl. Phys. A 60, 81-85 (1995),-0001,():
-1年11月30日
The defect evolution as a function of the an-nealing temperature has been studied in monocrystalline silicon grown in a hydrogen atmosphere and irradiated with 3.6x1017 neutrons/cm2. Positron lifetime spectros-copy has been used and the results compared w
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【期刊论文】Identification of Defects in Neutron-transmutation-doped Si by Positrons*
孟祥提, MENG Xiang-Ti
SCIENCE IN CHINA (Series A) Vol. 37 No.10 (1994) 1263-1271,-0001,():
-1年11月30日
The V and V2-type defects are dominant in NTD Si irradiated with 6x1016, 3.6xl027 and 1.2x1018 neutrons/cm2. Two distinct annealing stages of V-type defects exist: one at about 200℃ due to the annealing-out of P-V and (V2-O)- complexes; the other at about
positron lifetime spectroscopy,, neutron radiation,, silicon
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孟祥提, Xiang-Ti Meng*
Nuclear Instruments and Methods in Physics Research B 95 (1995) 65-69,-0001,():
-1年11月30日
The positron lifetime spectroscopy indicates that the V- and V2-type defects coexist in hydrogen containing FZ Si irradiated with high-dose reactor neutrons. Their positron annihilation behavior has been ascribed to the formation and annealing out of some
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【期刊论文】Vacancy-type defects in large-dose neutron-irradiated silicon containing hydrogen
孟祥提, By XIANG-TI MENG
PHILOSOPHICAL MAGAZINE B, 1994, VOL. 70, NO.4, 905-911,-0001,():
-1年11月30日
Vacancy-type defects created by neutron irradiation of floating-zone silicon containing hydrogen with a neutron dose of 1.2x1018cm-2 have been studied by positron lifetime spectroscopy and infrared absorption spectroscopy. The positron-trapping rates due
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【期刊论文】Effects of hydrogen on the annealing behavior of neutron-radiation-induced defects in Si
孟祥提, Xiang-Ti Meng, A. Zecca and R.S. Brusa, W. Puff
PHYSICAL REVIEW B VOLUME 50, NUMBER 4 15 JULY 1994-Ⅱ,-0001,():
-1年11月30日
Positron-lifetime measurements indicate that the effect of hydrogen on the annealing behavior of de- fects in Si irradiated with 3×10 17 neutrons/cm2 is very obvious. Neutron-induced monovacancy-type defects in hydrogen-containing Si disappear at 400℃, 20
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孟祥提, MENG Xiangti), KANG Aiguo), ZHANG Ximin), Li Jihong), HUANG Qiang), LI Fengmei), LIU Xiaoguang), and ZHOU Hongyu)
RARE METALS. Vol 23, No.2 (2004) 165-170,-0001,():
-1年11月30日
Changes of the average brightness and non-uniformity of dark output images, and quality of pictures captured under natural lighting for the color CMOS digital image sensors irradiated at different electron doses have been studied in comparison to those fr
color CMOS image sensor, electron irradiation, gamma radiation, irradiation damage, output characteristic, Si
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孟祥提, Xiang-Ti MENG*, Ai-Guo KANG and Zheng YOU
Jpn. L Appl. Phys. VoL. 41 (2002) pL2 No.8Ba,-0001,():
-1年11月30日
For the black and white complementary metal oxide semiconductor (B & W CMOS) digital image sensors irradiated at the y-my dose up to 60krad, the captured pictures are very clear, the average brightness, nonuniformity and dark noise of the dark output imag
CMOS image sensor,, gamma radiation,, silicon,, electron-hole pairs,, average brightness,, nonuniformity,, dark noise
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【期刊论文】Effects of electron and gamma-ray irradiation on CMOS analog image sensors
孟祥提, Xiang-Ti Meng a, *, Ai-Guo Kang a, Ji-Hong Li a, Hai-Yun Zhang b, Shi-jie Yu b, Zheng You b
X.-T. Meng et al./Microelectronics Reliability xxx (2003) xxx-xxx,-0001,():
-1年11月30日
Changes in the average brightness and non-uniformity of dark output images, and quality of the pictures captured under natural lighting from the black and white (B & W) complementary metal oxide semiconductor (CMOS) analog image sensors irradiated at dier
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