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  • 【期刊论文】AlGaN/GaN heterostructure grown by metalorganic vapor phase epitaxy

    张国义

  • 【期刊论文】Relationship of background carrier concentration and defects in GaN grown by metalorganic vapor phase epitaxy

    张国义

  • 【期刊论文】Temperature dependence of Raman scattering in single crystal GaN films

    张国义

  • 【期刊论文】Occurrence of cubic GaN and strain relaxation in GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates

    张国义

  • 【期刊论文】Etching damage and its recovery in n-GaN by reactive ion etching

    张国义

  • 【期刊论文】Effects of thermal convection on growth rate of GaN by MOVPE

    张国义

  • 【期刊论文】Alternative microstructure of GaN nucleation layers grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate

    张国义

  • 【期刊论文】P-Type GaN Directly Grown by Low Pressure Metalorganic Vapor Phase Epitaxy

    张国义

  • 【期刊论文】Effects of buffer layer on formation of domain boundaries in epilayer during film growth of GaN by low-pressure metal–organic vapor phase epitaxy on sapphire substrates

    张国义

  • 【期刊论文】InGaN/GaN MQW high brightness LED grown by MOCVD

    张国义

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