【期刊论文】Size-related ferroelectric-domain-structure transition in a polycrystalline PbTiO 3 thin film

卢朝靖， S. B. Ren， * C. J. Lu， J. S. Liu， H. M. Shen， and Y. N. Wang

【期刊论文】X-ray photoelectron spectroscopy study on composition and structure of sol-gel derived PbTiO3 thin films

卢朝靖， C. J. Lu a)， A. X. Kuang and G. Y. Huang

【期刊论文】The influence of yttria-stabilized zirconia surface pits on the initial stage of reactive La2Zr2O7 formation from La2O3 vapours and yttria-stabilized zirconia (001) substrates

卢朝靖， C. J. Luy， S. Senz and D. Hessez

【期刊论文】Microstructure and ferroelectric properties of sol-gel derived Bi3.15Nd0.85Ti3O12 thin films on Pt/Ti/SiO2/Si(100)

卢朝靖， J. H. Li， Y. Qiao， X. L. Liu， C. J. Nie， and C. J. Lu a)， Z. X. Xu and S. M. Wang， N. X. Zhang and D. Xie， H. C. Yu and J. Q. Li

【期刊论文】Formation and structure of misfit dislocations at the La2Zr2O7-Y2O3-stabilized ZrO2 (001) reaction front during vapour-solid reaction

卢朝靖， C. J. Lu， S. Senz and D. Hessey†

【期刊论文】Type of dissociated misfit dislocation in perovskite films on LaAlO3

卢朝靖， C. J. Lu a)

【期刊论文】High-resolution identification of 1 2 h110i stacking faults in epitaxial Ba0.3Sr0.7TiO3 thin films

卢朝靖， C. J. Luy and L. A. Bendersky， K. Chang and I.Takeuchi，

【期刊论文】Microstructure of epitaxial La0.7Ca0.3MnO3 thin films grown on LaAlO3 and SrTiO3

卢朝靖， C. J. Lu a) and Z. L. Wang b)， C. Kwon， Q. X. Jia

【期刊论文】X-ray evidence for the absence of 90-domains in polycrystalline PbTiO3 thin films with grains below a critical size

卢朝靖， C.J. Lu， H.M. Shen， S.B. Ren， Y.N.Wang

【期刊论文】Threading dislocations in epitaxial InN thin films grown on (0001) sapphire with a GaN buffer layer

卢朝靖， C. J. Lu a) and L. A. Bendersky， Hai Lu and William J. Schaff

【期刊论文】In situ study of the evolution of domain structure in free-standing polycrystalline PbTiO3 thin films under external stress

卢朝靖， S. B. Ren， C. J. Lu， H. M. Shen， and Y. N. Wang

【期刊论文】Dissociation and evolution of threading dislocations in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3

卢朝靖， C. J. Lu a) and L. A. Bendersky， K. Chang and I. Takeuchi