The fabrication of Sn-Se compounds, at room temperature by electrochemical atomic layer epitaxy (EC-ALE) is reported. EC-ALE involves the use of surface limited reactions to form atomic layers of the elements making up a compound (Sn and Se) in a cycle. Cyclic voltammograms were used to determine approximate deposition potentials for each element. The amperometric I-t method and differential pulse anodic stripping voltammetry were used to deposit and study the processes involved in a continuous cycling deposition which were used to form thin films of the compound. Through the analysis of the I-t transients and the stripping voltammograms it is possible to establish the formation of Sn-Se compounds. Taking into account the charges involved in the I-t deposition process, a general reaction scheme that considers the formation of SnSe2, SnSe2-x and SnSe compounds is proposed.

在氯化亚锡敏化、氯化钯活化的条件下，通过化学镀方法，成功地在纳米金刚石粉体表面制备了超薄铜膜。用X 射线粉末衍射（XRD）和傅立叶红外吸收光谱（FTIR）表征了该Cu-金刚石纳米复合材料。此种复合材料在无水乙醇中超声分散5min后的溶胶可稳定存放半年之久而不见沉降。

A theory for determining the heterogeneous stability constant of a metal complex system at the surface of a chemically modified carbon paste electrode was developed. The proposed theory has been applied to the studies of a copper(II)-humic acids (Has) complex system. In an open circuit, copper(II) was accumulated from a stirred preconcentration medium onto the HAs-CMCPE. The subsequent electrochemical measurement was performed in a small volume of Britton-Robinson (B-R) buffer (pH 3.78). By means of cyclic voltammetry (CV) and anodic stripping voltammetry (ASV), the determined average heterogeneous stability constant of copper(II)-HAs complex was 4.99