用循环伏安法研究了Sn2+在金盘电极上的欠电位沉积。在特别提纯的1mol/L HCl支持电解质溶液中，Sn2+在金盘电极上可以产生清晰的欠电位沉积峰和本体沉积峰.基于Au/Sn欠电位体系优良的电化学特性，发展了一种选择性好、灵敏度高的电化学分析方法。Sn2+浓度在1.96×10-10～2.91×10-8mol/L范围内与峰电流有线性关系。连续7次测定1.0×10-9mol/L Sn2+得到的相对标准偏差为5.06%。该方法已用于实际样品的测定，所得结果与原子发射光谱（ICP—AES）所得数据相吻合。

在具有催化还原活性的金电极表面，以水合肼为还原剂，在pHlO.5酒石酸钾钠溶液中，通过化学镀方法，选择性地在金电极表面沉积了单层结构的铜膜。用开路电位一时间谱技术（op-t）、循环伏安法（CV）和微分脉冲伏安法（DPV）表征了该溶液还原法对铜进行选择性富集的机理和效果。证明在多种金属离子共存的复杂溶液体系中，可以避免其它离子的干扰，使铜选择性地富集到金电极表面。化学镀浴中富集到金电极表面的单层铜膜溶出电流与cu2+的浓度在3×10-6～l×10-4mol、L范围内呈线性关系。该法已用于矿样中铜的还原富集、分离和测定，分析结果与电感耦合等离子体发射光谱法（ICP/AES）作了比较，结果满意。

在氯化亚锡敏化、氯化钯活化的条件下，通过化学镀方法，成功地在纳米金刚石粉体表面制备了超薄铜膜。用X 射线粉末衍射（XRD）和傅立叶红外吸收光谱（FTIR）表征了该Cu-金刚石纳米复合材料。此种复合材料在无水乙醇中超声分散5min后的溶胶可稳定存放半年之久而不见沉降。

This work describes a study of the underpotential deposition (UPD) of Sn2+ on a polycrystalline gold disc electrode using cyclic voltammetry (CV) and chronocoulometry (CC). Sn2+ ions showed well-defined peaks from UPD and UPD stripping (UPD-S) in 1 mol/L HCl solutions, while bulk deposition (BD) and BD stripping (BD-S) of the ions were also observed. The measured UPD shifts, DEUPD, between the UPD-S and the BD-S peaks were more than 200 mV. The UPD charge and the surface coverage of tin were measured by CC. A new method for determining Sn2+ was therefore developed, based on the excellent electrochemical properties of the Au/Sn UPD system. A plot of the UPD-DPASV (differential pulse anodic stripping voltammetry) signal versus the Sn(II) concentration was obtained for [Sn(II)] of 1.98

This investigation first proposed that open-circuit potential vs time (OCP-t) is a novel nonlinear potential step controlled by redox reaction and nucleation. A novel thermodynamic model of OCP-t is obtained for electroless deposition of Ni on Pd-activated p-type silicon 100. Thermodynamic transient properties such as capacity of double layer C, surface charge density q, interfacial tension, and resistance of chemical reaction Rr are calculated. Results show that the variation of OCP is dependant on the interfacial double layer. The breakdown and rearrangement of the double layer causes surface charge density step, which triggers momentary nucleation of Ni on the substrate. Results also show that reductant pulses would be an effective way to speed nuclei growth.