Binding energies of elements at the interface of oxygen-ion-irradiated ZrO2-Y2O3 films on an iron substrate were investigated by using X-ray photoelectron spectroscopyXPS. combined with ion etching. In addition to Zr or Fe simple binary suboxides, it is found that some Zr-O-Fe-like bonding configuration is formed due to ion irradiation, which has a favorable effect on the adhesion of the film to the substrate.

C-SiC films with different content of SiC were prepared with magnetron sputtering deposition followed by Ar+ion bombardment. Secondary ion mass spectroscopy depth profiles of hydrogen for the samples of C-SiC coated stainless steel and stainless steel substrate after H+ ion implantation and thermal annealing show different hydrogen concentrations in C-SiC coatings and stainless steel. Infrared (IR) transmission measurement was selected to study the mechanism of hydrogen retention by C-SiC films. The vibrational spectra in the range between 400 and 3200 cm-1 in IR transmission spectra show the Si-CH3, Si-CH2, Si-H, CH2, CH3 etc. bonds, which are responsible for retaining hydrogen. Apart from the mode above, there also exist bonds related to carbon and silicon such as Si-C, C=C. The contamination of oxygen entered the film to form C=O and SiO2 configurations and hydrogen contamination also formed Si-CH2 mode in the films