70% SiC-C films were deposited with r.f. magnetron sputtering on stainless steel substrates followed by ion beam mixing. These films were permeated by hydrogen gas under the pressure of 3.23

C-SiC films with different content of SiC were prepared with magnetron sputtering deposition followed by Ar+ion bombardment. Secondary ion mass spectroscopy depth profiles of hydrogen for the samples of C-SiC coated stainless steel and stainless steel substrate after H+ ion implantation and thermal annealing show different hydrogen concentrations in C-SiC coatings and stainless steel. Infrared (IR) transmission measurement was selected to study the mechanism of hydrogen retention by C-SiC films. The vibrational spectra in the range between 400 and 3200 cm-1 in IR transmission spectra show the Si-CH3, Si-CH2, Si-H, CH2, CH3 etc. bonds, which are responsible for retaining hydrogen. Apart from the mode above, there also exist bonds related to carbon and silicon such as Si-C, C=C. The contamination of oxygen entered the film to form C=O and SiO2 configurations and hydrogen contamination also formed Si-CH2 mode in the films

CdS films were prepared with chemical pyrolysis deposition (CPD) at different temperature followed by annealing. The results of microanalyses show that the prepared CdS films were dense and uniform and that their average grain sizes varied for different growth temperature. The CdS films deposited at 400-450℃ were poly-crystalline with wurtzite phase structure, and its lattice constants are: a=4.135 and c=6.713 Å. Hall measurements on electrical properties at room temperature show that resistivity, carrier density and mobility of the non-annealed CdS poly-crystalline films deposited at 400℃ were 1.48×104Ωcm, 1.82×1011cm-3 and2.42×103 cm2/(V s), respectively. The electrical properties of CdS films can be improved by annealing at a certain temperature range if these films are used as optical windows for solar cell.

X-ray photoelectron spectroscopy (XPS) has been used to determine the depth profile and chemical states of the implanted niobium in (0lÏ2) sapphire after annealing with a series of steps from 500℃to1100℃ in a reducingatmosphere. It is found that such an annealing procedure for the 380 keV niobium with a dose of 5×1016ions/cm-implanted into (0lÏ2) sapphire at room temperature causes Nb migration towards the surface and results in a twopeak feature distribution profile with the large peak at the surface. The implanted niobium in sapphire is in different local environments with different charge states after annealing. Higher charge states of Nb+5 and Nb+4 are distributed mainly in the near surface region due to oxidation under environment. The metallic state was caused by annealing in reducing atmosphere and was distributed mainly in the sub-surface region with a profile of two-peak feature. The other charge states such as Nb+2 and Nb+1 may be associated with the defects retained in sapphire and distributed to deeper distance. The concentration of each charge state of niobium with depth is also presented in this paper.

SiC films on stainless steel prepared by ion beam mixing were irradiated by hydrogen ion beam with an energy of 5 keV and a dose of 1