70% SiC-C films were deposited with r.f. magnetron sputtering on stainless steel substrates followed by ion beam mixing. These films were permeated by hydrogen gas under the pressure of 3.23

X-ray photoelectron spectroscopy (XPS) has been used to determine the depth profile and chemical states of the implanted niobium in (0lÏ2) sapphire after annealing with a series of steps from 500℃to1100℃ in a reducingatmosphere. It is found that such an annealing procedure for the 380 keV niobium with a dose of 5×1016ions/cm-implanted into (0lÏ2) sapphire at room temperature causes Nb migration towards the surface and results in a twopeak feature distribution profile with the large peak at the surface. The implanted niobium in sapphire is in different local environments with different charge states after annealing. Higher charge states of Nb+5 and Nb+4 are distributed mainly in the near surface region due to oxidation under environment. The metallic state was caused by annealing in reducing atmosphere and was distributed mainly in the sub-surface region with a profile of two-peak feature. The other charge states such as Nb+2 and Nb+1 may be associated with the defects retained in sapphire and distributed to deeper distance. The concentration of each charge state of niobium with depth is also presented in this paper.

CdS films were prepared with chemical pyrolysis deposition (CPD) at different temperature followed by annealing. The results of microanalyses show that the prepared CdS films were dense and uniform and that their average grain sizes varied for different growth temperature. The CdS films deposited at 400-450℃ were poly-crystalline with wurtzite phase structure, and its lattice constants are: a=4.135 and c=6.713 Å. Hall measurements on electrical properties at room temperature show that resistivity, carrier density and mobility of the non-annealed CdS poly-crystalline films deposited at 400℃ were 1.48×104Ωcm, 1.82×1011cm-3 and2.42×103 cm2/(V s), respectively. The electrical properties of CdS films can be improved by annealing at a certain temperature range if these films are used as optical windows for solar cell.

SiC films on stainless steel prepared by ion beam mixing were irradiated by hydrogen ion beam with an energy of 5 keV and a dose of 1

Carbon films were deposited by r.f. magnetron sputtering on tungsten substrates followed by irradiating processes with nitrogen and argonions. Microanalyses were used to obtain information on the phase, composition and chemical states of elements in the samples. It is found that Ar+ ion irradiation did not lead to the formation of tungsten-carbide, while nitrogen ions bombardment can induce formation of WCx, and at the same time, can react with tungsten to form the WN phase. With alternating Ar+ and nitrogen ions, the carbon films on tungsten substrate were transformed into tungsten-carbide.