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陈培毅
,-0001,():
-1年11月30日
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陈培毅, Chenrong
Materials Science in Semiconductor Processing 7 (2004) 379-382,-0001,():
-1年11月30日
Resonant tunneling diodes (RTD) are considered as one of the most promising band-gap engineering heterostructure devices for negative differential resistance (NDR) feature in the current–voltage trace. In this letter, a p-well SiGe/Si RTD is proposed and demonstrated. Its I V relationship is obtained by Keithley 4200 semiconductor parameter analyzer, and NDR feature can be observed obviously at room temperature. The obtained peak current density is 45.92 kA/cm2, and peak to valley current ratio (PVCR) is 2.21. Considering the influence of series resistance on the I V relationship, the DC-parameter of RTD was extracted from the experimental data. This work is helpful to improve the performance of RTD and design of RTD-based circuits.
SiGe,
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