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【期刊论文】Oscillating tunneling magnetoresistance in magnetic double-tunnel-junction structures
邢定钰
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-1年11月30日
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【期刊论文】Temperature dependence of tunneling magnetoresistance in manganite tunnel junctions
邢定钰
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-1年11月30日
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邢定钰, Zhiming Zheng, D. Y. Xing, Guoya Sun, and Jinming Dong
PHYSICAL REVIEW B, 2000, 62 (21): 14326~14330,-0001,():
-1年11月30日
We take the Andreev reflection into account and apply a quantum-mechanical approach to studying spinpolarized transport in a ferromagnet/superconductor/ferromagnet double tunnel junction and its effect on superconductivity in the superconductor. It is found that in the presence of the Andreev reflection the tunneling magnetoresistance in the double tunnel junction depends strongly on barrier strength. In the antiferromagnetic alignment of the magnetizations, an increase in bias voltage will give rise to a first-order transition from the superconducting state to a normal one.
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【期刊论文】Macroscopic theory of giant magnetoresistance in magnetic granular metals
邢定钰, R. Y. Gu and L. Sheng, D. Y. Xing, Z. D. Wang, J. M. Dong
PHYSICAL REVIEW B, 1996, 53 (17): 11685~11691,-0001,():
-1年11月30日
A macroscopic theory of giant magnetoresistance in granular magnetic materials is developed to improve on that of Rubinstein [Phys. Rev. B 50, 3830 (1994)]. By using a self-consistent method and introducing a useful parametrization, we show the magnetotransport in granular systems to be between those for currents in the plane of layers and currents perpendicular to the plane of the layers in multilayers. The theoretical result in the local limit is found to be in agreement with the observed singular dependence of the giant magnetoresistance on annealing temperature.
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【期刊论文】Metal-insulator transition in the mixed-valence manganites
邢定钰, L. Sheng, D. Y. Xing, D. N. Sheng and C. S. Ting
PHYSICAL REVIEW B, 1997, 56 (12): 7053~7056,-0001,():
-1年11月30日
It is found that the sharp resistivity peak observed near the Curie temperature TC in the manganites R12xAxMnO3 is closely correlated to the residual resistivity r 0 of the sample, suggesting that nonmagnetic randomness plays an important role in determining their anomalous properties. Using the one-parameter scaling theory to study the electronic localization due to both the nonmagnetic randomness and the double exchange spin disorder, we show that the sharp resistivity peak is caused by the Anderson metal-insulator (M-I) transition and that r 0.r c (a critical value) is a prerequisite to the occurrence of the M-I transition. TC as a function of r 0 has also been calculated. These results are in good agreement with experimental measurements.
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