Highly transparent conducting indium tin oxide(ITO) films have been prepared on polyester thin film substrate by reactively evaporating metal In-Sn alloy in a system with an oxygen partial pressure of (3-30)×10-5 Torr and substrate temperatures between 80 and 240℃. The structure and opto-electrical properties of the films depending on the deposition conditions have been investigated. High quality films with a average transparency of 83% and the resistivity of 7×10-4 v cm have been obtained by controlling the deposition prameters.

This paper describes the preparation of aluminium-doped zinc oxide films by thermal evaporation of zinc acetate(Zn(CH3COO)2

Undoped and Aluminium-doped Zinc oxide films have been prepared by thermal evaporation of zinc acetate (Zn(CH3COO)2

Sn-doped indium oxide(ITO).films have been prepared on polyimide(PI).thin film substrate at low substrate temperature (80–240℃).by reactive evaporation. The samples were deposited as polycrystalline films with a cubic bixbyite structure and a preferred orientation with the(111).plan parallel to the substrate. The structural, optical and electrical properties of the obtained films depending on deposition temperature have been investigated. High quality films with resistivity as low as 7×10-4 V cm and transmittance over 80% have been obtained by suitably controlling the deposition parameters.

Highly transparent conducting indium tin oxide(ITO)films have been prepared on glass substrates by reactively evaporating In-Sn alloy in a system with an oxygen partial pressure of (1-2)×10-4 Torr and a substrate temperature between 100 and 320℃. Mechanically stable polycrystalline conducting ITO films having a preferred orientation with the (111) planes parallel to the substrates were deposited with resistivities in the range from 1.12×10-4 to 3.07×10-4 cm, with carrier densities between 7×1020 and 1.27×1021 cm-3 and Hall mobilities between 27 and 40 cm2 V-1 S-1. The average transmittance reached 95% for a film 175 nm thick in the wavelength range of the visible spectrum. The resistivities and transmittances of the obtained films depended on the oxygen partial pressures and substrate temperatures during film fabrication.