The preparation of 1-inch double-sided YBCO thin films by simultaneous sputtering from a single target is reported. By rotating the substrate around the rod of the substrate holder and the normal of the substrate, YBCO thin films were simultaneously deposited on both sides of 1-inch (100)LaAlO3 substrate from a single inverted cylindrical sputter gun. The TC0 values of the YBCO thin films on both sides of the wafer were 90.3 and 90.4K, respectively. The transition width was 0.8K. The microwave surface resistance, Rs (77K, 10GHz), of the YBCO thin films on both sides of the wafer were 330 and 400mV, respectively. The uniformity of Rs values over the whole 1-inch wafer is good and the properties of YBCO thin films were found to be very similar on both sides of the wafer.

The dependence of YBCO thin film properties on the deposition rate was studied in this report. The thermodynamic growth parameters (substrate temperature, total pressure and oxygen partial pressure) were optimized at a fixed deposition rate first. Then keeping the thermodynamic growth parameters optimized values, YBCO thin films were deposited at different deposition rates. The effect of the deposition rate on the superconducting transition properties, caxis lattice constant, concentration of lattice disorder and surface smoothness of YBCO thin films was studied. The measurements show that the optimized thermodynamic growth parameters are closely correlated to the deposition rate. At a fixed deposition rate of 0.5AA/s and its optimal thermodynamic growth parameters, YBCO thin films with superior superconducting transition temperature, the lowest concentration of lattice disorder, and the lowest surface roughness were prepared. By using the same thermodynamic growth parameters, changes in deposition rate were shown to degrade the superconducting transition temperature, increase the lattice disorder, and increase the roughness of the YBCO thin films.

In this article, we report the growth of purely (001). oriented single crystal Y1Ba2Cu3O7yx thin films with excellent crystal perfection by afterglow plasma sputtering. Because of little energetic ion and electron bombardment, the crystal perfection of Y1Ba2Cu3O7yx thin films was significantly improved. The full width at half-maximum value of the rocking curve around the (005). diffraction peak of the films is 0.12

The effects of grain size on nonlinear dielectric properties of as-deposited SrTiO3(STO) thin films were studied by using interdigital capacitor. C-axis-oriented STO thin films with different grain size were deposited onto interdigital electrodes made from YBa2Cu3O7-x thin films by pulsed laser deposition (PLD) technique. The grain size of as-deposited STO thin films increased with substrate temperature, and reached a maximum value at 700℃. With further increase of substrate temperature, the grain size decrease rapidly because of the negative oxygen supersaturation and the high nucleation density. The nonlinear dielectric properties measurements showed to be highly correlated with the grain size of STO thin films; the zero-bias dielectric constant, the dielectric dissipation, and the tunability decreased with the decrease of the grain size.