More researchers hme paid mltch attention to fabrication of field emission triode with volcano-typed gate on the silicon substrate in recent years because of ease of fabrication and low cost. In this paper, five different structures of this triode are presented The electric field of the top of field emitter(Etip) is calculated in these structures by using EMAS software, and the different potential distribution and electric field distribution are got from these calculations. The results show that the diameter of gate hole gives much effect of the Etip fof" this triode, Because the volcano-typed gate holes fabricated by wet or dry etching have the very sharp rim, when the space between anode and gate is small, the high electric fieM more than 1

In this paper, new single- and double-gate race-track-shaped field emitter structures are reported for the first time. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turn-on voltage. Experimental results show that the turn-on voltage of the single-gate structure is approximately 100V, and the field emission current density is approximately 2.4A/cmz which is over 12 times larger than that of the volcano-shaped emitter structure reported previously. Furthermore, numerical simulations show that turn-on voltage of the double-gate structure is reduced by 30% compared to the single-gate structure.

In this paper, numerical and experimental characterization of new single-and double-gate race-track-shaped field emitter structures are reported. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turn-on voltage and minimum gate current. Experimental results show that the turn-on voltage of the singlegate structure is approximately 100V, and the field emission current density is approximately 2.4A/cm2. Furthermore, field emission characteristics of the single- and double-gate structures are numerically simulated. Results show that turn-on voltage of the double-gate structure is reduced by 30% and ratio of anode current to gate current is increased by 36 times compared to that of the single-gate structure at a gate voltage of 350V.