We have prepared the Y Ca Ba Cu O with xF compounds by the solid state reaction technique. The uperconduct-1yx x 2 3 y ing critical temperature was measured. The structural parameters as a function of Ca substitution were obtained through the detailed analysis of the X-ray diffraction for these Ca-doped samples. The variation of the lattice parameters, some meaningful bond lengths, and the microstrain in lattice change with the Ca content have been discussed.

Lai. 85Sro. 15Cul-yMy04 ceramic cuprates with M-Zn, Ni, Mg, and). ≤0.30 have been synthesized. The superconduct-ing critical temperatures and the room temperature resistivities for M doping have been determined by a standard four-probemethod. The width of each reflection of X-ray diffraction for each sample is analyzed by Rietveld refinements which is related to the average grain size and the average lattice microstrain. In this way we attempt to explain the stronger suppression for non-magnetic doping such aS Zn or Mg than that for magnetic doping such as Ni.

We we have successfully fabricated ceramic superconductors of Hg-1223 with substitution of Pb for Hg, i. e. Hg1-xPbxBa2Ca2Cu3ov, by using encapsulation and short time annealing techniques. Samples fabricated in this manner may have nearly single phase structure and some enhancement ofTc can be achieved through this method. The materials of this ceramic with x ranging from 0 to 0.5 exhibit high-temperature superconductivity at temperatures falling in the range from 103 to 135K. The sample with optimum doping of Pb of x=0.34 and 6=0.40 has a highest Tc of 135K and its diamagnetic onset temperatureTdiac=143K. The composition of this sample has been found experimentally and is specified by a formula of Hg0.66Pb0.34Ba2Cal. 98Cu2.9708.4. The valence number for the copper constituent is given byvcu=2.30

Si/Ta/Co/Cu/CoFeMn sor NiOd spin valves were prepared by a delayed sputtering procedure, in which depositions of Ta and followed layers were intervened by 1 h. The spin valves are found to have better coherent growth with stronger s111d preferred orientations in Co and Cu layers, compared with the traditional continuous method. At the same time, the giant magnetoresistance ratio and spin-dependent scattering are enhanced by a factor of 20%-30%. These results indicate that the coherent growth and the s111d preferred orientation can enhance the spin-dependent scattering of spin valves.

The magnetic and electrical properties of crystalline Mn0.05Si0.95 films prepared by post-thermal treatment of the as-deposited amorphous Si-Mn s95 at.%−5 at.%d have been investigated. Both the temperature dependence and field dependence of magnetization were measured using superconducting quantum interference devices, and it has been indicated that the film materials are ferromagnetic with Curie temperature over 400K. X-ray diffraction analysis revealed full crystallization of the films and the incorporation of Mn into the host crystalline Si lattice. Behavior of thermally activated conduction processes of the films has been evinced by electrical property measurement for the films.