A metallization scheme has been developed for obtaining low ohmic contacts to nGaN with a low contact resistance. The metal contact is a Ti/Al/Ti/Au composite with layers that are respectively 30, 100, 30, and 30 nm thick. Contacts with a specific contact resistivity r s, as low as 6.0 31027 V cm2 for a doping level of 1.4031020 cm23 were obtained after annealing the sample for 30 s at 750℃ in a rapid thermal annealer. The Ti placed on top of the traditional Ti/Al contact appears to have the advantage of tying up the excess Al; therefore it does not form a mottled contact. Some of the additional Ti-Al intermetallic alloys that are formed also have beneficial effects. The Ti-Au layer forms a robust upper portion of the composite, which enables the contacts to have hightemperature applications.