为了充分利用已有系统的数据资源和服务资源,建立一个扩展性好、资源占用 少、松散耦合、复用性强、维护方便的平台级或大型集成系统，文中提出了一种基于消息队 列软总线的系统集成方案，利用net程序集技术和C#语言的反射机制来构造“热插拨”数 据适配器,并将其编写成DLL程序集组件,从而实现异构（不同数据标准或格式）系统之 间有效的、方便的数据交换。该方案已应用于物流通关公共服务信息平台。

The Active Queue Management (AQM) strategies are important in Internet congestion control, which bear the PmIlPlD Structure esscntially. But it is hard to configure thc controlling parameters to achieve good tradcoff among a series of,$erformancc objectives. In this paper, we derivc the approximate First Order Lag Plus Delay (FOLPD) model of TCP/AQM and present a guideline to design PIPID, AQM in. the network routers. Both positional and incremental PIIPTDd: implementations arc considered. Simulation results manifest the effectiveness of thc proposed tuning method.

A computer modelling method for the three-dimensionaldynamic analysis of liquid crystal display cells is presented. Themethod is based on a variational approach to the Oseen-Frank freeenergy formulation considering three elastic constants and uses avectorial representation of the director field. A simpler approximateform that uses only two elastic constants but is faster to operate isobtained as a by-product of the full three-constant modelimplementation. The modelling uses finite elements on a mesh oftetrahedral elements for the calculation of directors and electricpotentials while finite differences in time are used in the time steppingprocess. Comparisons are made with results from a 2D dynamicprogram using a tensor model giving good agreement.

In this paper, we consider a pariicular model of electron-beam-inducedpair excitation. This model takes account of thickness dependence and istherefore considerably more realistic than the constant generation rate assumedwe in a previous paper. The surface recombination velocity (SRVo) n the uppersurface can be varied independently of that on the lower surface. An exactanalytical expression for the Green function (GF) has been found. Funher, generalexpressions for the minoriiy carrier concentration profile (MCCPa), nd hence forthe cathodoluminescence intensity (cu) are constructed merely by convolving theGF with the pair-generation function which is allowed to assume arbitrary form.Here a 'correlation function' form of the pair excitation density is considered whichnon-trivially makes the entire problem be of completely analytical formulation. Theinfluence of various physical parameters, especially the SRV, the diffusion length(oL), and the incident vonage on the MCCP and cu, are discussed in more detailtheoretically and numerically. Explicit analytical forms of the GF, MCCP, and cuare given for various surface-recombination conditions as well as expressionsfor junction current (JC) in the charge-collecting modes. An example is givenof a model prediction in agreement with experimental results which cannot beobtained by previously existing models. It is found that the present formalism canalso be used to tackle the problems of dislocation-or defect-imaging contrastand resolution in thin film materials within some approximation scheme andthat many past models can be reproduced from the present model as specialcases. It is anticipated that the generality of the model which we propose willbe of considerable interest in seeking an understanding of experimental resuns.Quantitative calculations reveal many interesting and even unusual featurescontained in the new model

In this paper, the effects are examined of the upper and the lower sulface recombinationv elocities, SI,S z, the diffusion length of excess minority carriers, L, and the thickness of the sample, h. on the minority carrier concentration profile (MCCPa) nd on the intensity of cathodoluminescence (CL) from thin foils. A systematic theoretical investigation of these effects is essential lo the understanding of experimental resuits which have recently been obtained by high-resolution CL imaging studies. By solving the reduced one-dimensional steady-stale diffusion equation under the non-trivial and realistic boundary conditions that the recombination velocities SI and Sp on the upper and lower surfaces are allowed lo vary independently of each other, exact and anaiyiical expressions for the MCCP and CL intensity (cu) are oblained for the general case of sulface recombination (sR). A number of special SR cases are discussed. The important question of the thickness dependence of the CL is addressed. Conditions for linear, square or cubic dependence of cu on h are deduced together with expressions for a thickness which we call the cut-off thickness. The capability of using the present analytical resun for MCCP to treat the electronbeam- induced current problem here is pointed out in passing together wlh TEM or STEM charge collection imaging and contrast problems of dislocations or defects. Specific numerical calculations are used to display the theoretical resuits quanlilalively and reveal a variety of properties of the model controlled by different values of the parameters contained within it. The resuits obtained can be used to explain and examine the features of CL in thin-film materials when examined in TEM or STEM modes. in some given cases, experimental determinations of the parameters can be made: