SiC nanorods were synthesized through carbothermal reduction of SiO by C nanocapsules (CNCs) or amorphous activated C (AAC). The synthesized nanorods were characterized by high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectrometry (EDS). The nanorods formed during a reaction between SiO and CNCs were straight. They displayed a preferential orientation of the growth axis; Which was either parallel or normal to the [111] direction. The nanorods formed during reaction between SiO and AAC consisted of straight and curled parts or chains of SiC nanoparticles. The straight parts were aligned in the [111] direction. A surface of the rod tip was covered with a thin amorphous layer, 1～3 nm thick; Containing Si; C and traces of O. Formation mechanism of the SiC nanorods was proposed.

SiC nanorods with a needle-like shape have been synthesized by carbothermal reduction of SiO at 1410℃, where the reductant is highly curled carbon nanotubes (CNTs) containing Fe nanoparticles approximately 10nm in size. Each SiC nanorod has a rounded Fe–Si single crystalline tip 120-250 nm in size and a sharp SiC tip approximately 10nmin size. Along the nanorod axis, the diameter decreases gradually from approximately 100 nm on the Fe-Sitip side to approximately 10nm on the sharp SiC tip. A revised vapor-liquid-solid mechanism from Wagner's mechanism is proposed to explain the formation of the SiC nanorods.

β-SiC nanorods have been synthesized by the reaction of SiO and carbon nano-capsules. For the synthesis of SiC nanorods, it was examined that the reaction temperature and the ratio of SiO to carbon nanocapsules are important and the most appropriate temperature and ratio are around 1380℃ and 5:2, respectively. The synthesized SiC nanorods were characterized by high-resolution electron microscopy. Most of the SiC nanorods are straight and have the diameter of 30-150 nm while the SiC tips of the SiC nanorods have the size 100-400 nm. The SiC nanorods have many stacking faults normal to the [111] direction. Each SiC nanorod has one kind of preferential axis direction, which is either parallel or normal to the [111] direction. Based on the microstructural analysis of the SiC nanorods, a possible growth mechanism of the SiC nanorods is proposed.

用高分辨电子显微学方法研究了Ni80Fe20/Mo磁性多层膜，结果表明：(1)多层膜的结晶状态，随Mo非磁性层厚度而变化。当Mo层厚度为0.7nm时，多层膜基本为非晶；当Mo层厚度大于116nm时，Mo层和NiFe层内分别结晶为体心立方和面心立方多晶，层内晶粒尺寸为2-6nm。(2)在Mo层厚度为1.6和2.1nm的多层膜中，NiFe层和Mo 层之间存在两种取向关系：(110) Mo∥(111) NiFe，[111]Mo∥[110]NiFe和（110）Mo∥（111）NiFe，[001 ]Mo ∥[ 110 ]NiFe(3) NiFe层和Mo层之间有较清晰的界面。界面附近3-4个原子层范围内，NiFe 和Mo 的面间距分别相对块状晶体沿生长方向膨胀和压缩。讨论了界面附近面间距的变化，并根据该多层膜显微结构特征，讨论了此系统未显示巨磁电阻效应的原因。

A high-resolution electron microscopy study of β-SiC nanoparticles formed by C+-implantation of single crystal silicon with subsequent annealing has been carried out. The as-implanted sample had a trilayered structure, in which the surface layer, A, and the bottom layer, C, were crystalline but damaged, and the middle layer, B, was amorphous. After annealing this structure, β-SiC particles were formed throughout the trilayered structure but with different forms: a few epitaxial β-SiC nanoparticles in layers A and C, and more random nanoparticles in layer B. The β-SiC nanoparticles, in the size range 2-8nm, should be responsible for the blue-emitting effect of the silicon-based porous β-SiC