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贾天卿, Tianqing Jia, *, Motoyoshi Baba, Masayuki Suzuki, Rashid A. Ganeev, Hiroto, Kuroda, Jianrong Qiu, Xinshun Wang, Ruxin Li, and Zhizhan Xu
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-1年11月30日
Two-dimensional periodic nanostructures on ZnO crystal surface were fabricated by two-beam interference of 790 nm femtosecond laser. The long period is, as usually reported, determined by the interference pattern of two laser beams. Surprisingly, there is another short periodic nanostructures with periods of 220-270nm embedding in the long periodic structures. We studied the periods, orientation, and the evolution of the short periodic nanostructures, and found them analogous to the self-organized nanostructures induced by single fs laser beam.
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【期刊论文】Mechanisms of femtosecond laser-induced damage in magnesium fluoride
贾天卿, Haiyi Suna, *, Tianqing Jiaa, b, Chengbin Lia, Xiaoxi Lia, Shizhen Xua, Donghai Fenga, Xiaofeng Wanga, Xiaochun Gea, Zhizhan Xua
Solid State Communications 141 (2007) 127-131,-0001,():
-1年11月30日
We studied the single-shot damage in magnesium fluoride irradiated by 800 nm femtosecond (fs) laser. The dependence of damage thresholds on the laser pulse durations from 60 to 750 fs was measured. The pump-probe measurements were carried out to investigate the time-resolved electronic excitation processes. A coupled dynamic model was applied to study the microprocesses in the interaction between fs laser and magnesium fluoride. The results indicate that both multiphoton ionization and avalanche ionization play important roles in the femtosecond laser-induced damage in MgF2.
A., Magnesium fluoride, D., Damage mechanisms, E., Femtosecond laser, E., Pump–probe measurements
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【期刊论文】Mechanisms of femtosecond laser-induced breakdown and damage in MgO
贾天卿, S.Z. Xu a, *, T.Q. Jia a, b, H.Y. Sun a, C.B. Li a, X.X. Li a, D.H. Feng a, J.R. Qiu a, Z.Z. Xu a
Optics Communications 259 (2006)274-280,-0001,():
-1年11月30日
Single-shot laser damage threshold of MgO for 40-986 fs, 800 nm laser pulses is reported. The pump-probe measurements with femtosecond pulses were carried out to investigate the time-resolved electronic excitation processes. A theoretical model including conduction band electrons (CBE) production and laser energy deposition was applied to discuss the roles of multiphoton ionization (MPI) and avalanche ionization in femtosecond laser-induced dielectric breakdown. The results indicate that avalanche ionization plays the dominant role in the femtosecond laser-induced breakdown in MgO near the damage threshold.
Avalanche ionization, Laser-induced breakdown, Femtosecond laser, Time-resolved dynamics, MgO
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【期刊论文】Ultraviolet-infrared femtosecond laser-induced damage in fused silica and CaF2 crystals
贾天卿, T.Q. Jia, H.X. Chen, M. Huang, and F.L. Zhao, X.X. Li, S.Z. Xu, H.Y. Sun, D.H. Feng, C.B. Li, X.F. Wang, R.X. Li, and Z.Z. Xu, X.K. He and H. Kuroda
,-0001,():
-1年11月30日
The damage in fused silica and CaF2 crystals induced by wavelength tunable femtosecond lasers is studied. The threshold fluence is observed to increase rapidly with laser wavelength λ in the region of 250-800nm, while it is nearly a constant for 800<λ<2000nm. The ultrafast electronic excitation is also studied by a pump and probe method. The reflectivity increases rapidly in the latter half of pump pulse, which supports that impact ionization plays an important role in the generation of conduction band electrons (CBEs). We study the CBEs absorption via subconduction-band sub-CB transition, and develop a coupled avalanche model. Our results indicate that the CBEs absorption via sub-CB transition plays an important role in the damage in dielectrics irradiated by the visible and near ultraviolet femtosecond lasers. Our theory explains well the experiments.
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【期刊论文】ZnSe nanowires grown on the crystal surface by femtosecond laser ablation in air
贾天卿, T.Q. Jiaa, H.X. Chen, M. Huang, X.J. Wu, and F.L. Zhao, M. Baba, M. Suzuki, and H. Kuroda, J.R. Qiu, R.X.Li, and Z.Z. Xu
,-0001,():
-1年11月30日
Uniform ZnSe nanowires are observed on the ablation crater on ZnSe crystal surface irradiated by femtosecond lasers in air, while other parts of the sample surface are not polluted. The nanowire growth rate is about 5μm/s, it is higher than that fabricated by chemical vapor deposition method by a factor of 104. The nanowire length and diameter can be controlled by varying laser pulse energy and pulse number. The formation mechanism is studied and found to be self-catalyzed vapor-liquid-solid process.
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