Uniform ZnSe nanowires are observed on the ablation crater on ZnSe crystal surface irradiated by femtosecond lasers in air, while other parts of the sample surface are not polluted. The nanowire growth rate is about 5μm/s, it is higher than that fabricated by chemical vapor deposition method by a factor of 104. The nanowire length and diameter can be controlled by varying laser pulse energy and pulse number. The formation mechanism is studied and found to be self-catalyzed vapor-liquid-solid process.

The damage in fused silica and CaF2 crystals induced by wavelength tunable femtosecond lasers is studied. The threshold fluence is observed to increase rapidly with laser wavelength λ in the region of 250-800nm, while it is nearly a constant for 800<λ<2000nm. The ultrafast electronic excitation is also studied by a pump and probe method. The reflectivity increases rapidly in the latter half of pump pulse, which supports that impact ionization plays an important role in the generation of conduction band electrons (CBEs). We study the CBEs absorption via subconduction-band sub-CB transition, and develop a coupled avalanche model. Our results indicate that the CBEs absorption via sub-CB transition plays an important role in the damage in dielectrics irradiated by the visible and near ultraviolet femtosecond lasers. Our theory explains well the experiments.

A new pump and probe experimental system was developed, the pump pulse duration of which is stretched and is much longer than that of the probe pulse. Using this system, time-resolved electronic excitation processes and damage mechanisms in CaF2 crystals were studied. The measured reflectivity of the probe pulse begins to increase at the peak of the pump pulse and increases rapidly in the latter half of the pump pulse, when the pump pulse duration is stretched to 580 fs. Our experimental results indicate that both multiphoton ionization and impact ionization play important roles in the generation of conduction band electrons, at least they do so when the pump pulse durations are equal to or longer than 580 fs.

The damage morphologies, threshold fluences in ZnO films were studied with femtosecond laser pulses. Time-resolved reflectivity and transmissivity have been measured by the pump-probe technique at different pump fluences and wavelengths. The results indicate that two-phase transition is the dominant damage mechanism, which is similar to that in narrow band gap semiconductors. The estimated energy loss rate of conduction electrons is 1.5V/ps.

The one- and the two-photon absorption rates of conduction-band electrons (CBEs) in dielectric materials are calculated by second-and third-order perturbation theory, respectively. Here fused silica irradiated under 526 nm ultra-short pulse laser is used as an example. Compared with the case that only the one-photon absorption of CBE assisted by a phonon is considered. the rate of total energy gain of CBE from laser field will be enhanced by a factor of 3 when both of the one-and the two-photon absorption are included. The avalanche rate includes not only the term proportional to laser intensity, but also the terms proportional to the square of laser intensity and to the product of laser intensity and hole density. The damage threshold is calculated on the basis of the avalanche model, and find it is lowered by about 15% compared with the case for only the one-photon absorption of CBE assisted by a phonon is considered. The theoretical value agrees well with experimental results.