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【期刊论文】The growth defects in self-frequency-doubling laser crystal NdxYl-xAl3(B03)4
胡小波, X.B. Hu a, *, S.S. Jiang a, X.R. Huang a, W.J. Liu a, C.Z. Ge a, J.Y. Wang b, H.F. Pan b, J.H. Jiang c, Z.G. Wang
Journal of Crystal Growth 173(1997)460-466,-0001,():
-1年11月30日
The growth defects in flux-grown NdxYl-xAl3 (B03)4 (NYAB) single crystals have been investigated by means of chemical etching and synchrotron radiation techniques. The band-shaped and polysynthetic twins were detected by optical microscopy due to the difference in etching rates between the host crystal and the twin. In the meantime, the orientation and symmetry of the twins were analyzed from their etching patterns. A large number of etch pits with regular shapes were also found on the surface, and these etch pits correspond to outcrops of the dislocations originating from the seed crystal or inclusions. The growth defects in flux-grown NdxYl-xAl3 (B03)4 (NYAB) single crystals have been investigated by means of chemical etching and synchrotron radiation techniques.The band-shaped and polysynthetic twins were detected by optical microscopy due to the difference in etching rates between the host crystal and the twin. In the meantime, the orientation and symmetry of the twins were analyzed from their etching patterns. A large number of etch pits with regular shapes were also found on the surface, and these etch pits correspond to outcrops of the dislocations originating from the seed crystal or inclusions.
Growth defect, Twins, Synchrotron radiation topography, Chemical etching, NdxY1-xAl3 (, B03), 4 crystal
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胡小波, X.B. Hu a, *, J.Y. Wang a, W.H. Cui a, Q.C. Guan a, R.B. Song a, J.Q. Wei a, Y.G. Liu a, J.H. Jiang b, Y.L. Tian b
Journal of Crystal Growth 205(1999)323-327,-0001,():
-1年11月30日
The growth defects in #ux grown RbTiOAsO 4 crystal have been investigated by white-beam synchrotron radiation topography. It is found that growth sector boundaries are the primary growth defects and they show strong X-ray kinematical contrast in the topograph. All the dislocations are growth induced and appear only in the near capping region. The area away from the capping region is nearly dislocation free. Growth bands show weak contrast in the X-ray topograph, which implies that the impurity contents are relatively low in various growth sectors and each growth sector is uniform in composition. (1999 Elsevier Science B.V. All rights reserved.
Dislocation, Growth band, Growth sector boundary
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胡小波, X. B. Hu (a), J. Y. Wang (a), L. L. Tian (a), Q. C. Guan (a), Y. G. Liu (a), J. Q. Wei (a), M. H. Jiang (a), W. J. Liu (b), S. S. Jiang (b), and J. H. Jiang (c)
phys. stat. sol. (a) 170, 29 (1998),-0001,():
-1年11月30日
The growth twinning in self-frequency-doubling laser crystal NdxGd1 xAl3 (BO3) 4 (NGAB) has been observed with white-beam synchrotron radiation topography (WBSRT). It is shown that the growth twinning in flux-grown NGAB crystal is the 180 rotation twin in which the twofold symmetric operation axis is parallel to the [0001] direction and this kind of twinning often shows the black-and-white contrast in X-ray topography. It is believed that the growth twinning in NGAB was induced by growth bands formed during crystal growth.
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【期刊论文】Growth and defects in YbxY1 xAl3 (BO3) 4 crystals
胡小波, Jiyang Wang a, Xiaobo Hu a, b, *, Hong Liu a, Jing Li a, Shusheng Jiang b, Shanrong Zhao a, Bing Teng a, Yulian Tian c, Jianhua Jiang c
Journal of Crystal Growth 229(2001)256-260,-0001,():
-1年11月30日
YbxY1 xAl3 (BO3) 4 (x 0:1, 0.07 and 0) crystals have been grown by the flux method. The growth defects of YbxY1 xAl3 (BO3) 4 crystals were detected by X-ray topography. It is found that the perfection of YbYAB crystal with low Yb dopant is better than that with high Yb dopant. In Yb0. 1Y0. 9Al3 (BO3) 4 crystal, growth bands, growth boundaries, grown-in dislocations and inclusions were observed. However, the densities of growth defects for Yb0. 07Y0. 93Al3 (BO3) 4 and YAl3 (BO3) 4 are low and no obvious inclusions are observed in these crystals. In addition, growth twins were detected in YbxY1 xAl3 (BO3) 4 crystal by using the chemical etching method. It is found that the rowth twins occur frequently in Yb0. 1Y0. 9Al3 (BO3) 4 crystal whereas no growth twin appears in YAl3 (BO3) 4 crystal. Based on the experimental observations, the formation mechanism of growth twins is discussed. In the meantime, the e ective measures for reducing the growth twins and defects are proposed.
KTiOPO4, SHG, Damage threshold, Crystal growth
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【期刊论文】GROWTH TWINS IN SELF-FREOUENCY DOUBLING LASER CRYSTAL YbXY1-XA13(B03)4
胡小波, Xiaobo HU, Jiyang WANG, Jingqian WEI, Yaogang LIU, Renbo SONG and Minhua JIANG
Progress in Crystal Growth and Characterization of Materials (2000) 57-61,-0001,():
-1年11月30日
Using chemical etching. method, the growth twins in self-frequency doubling laser crystal YbxYl-xAl3 (B03)4 have been observed. The etching pits on both sides of growth twin boundaries in the (101l) slice are ofthe triangles with different orientations. The structure ofgrowth twins is investigated by trallsmission synchrotron topography. In the transmission synchrotron topograph, the growth twins are visible not bv domain contrast 'but by' boundary contrast', i.e. the twins appear in the topograph in form of X-rav kinematical diffraction contrast due to the lattice strain stemming from the impurity incorporaton in the boundaries. The growth twins in YbxY1-xAl3 (B03)4 crystal are of inversion types, since no domain cnntrast Was observed..
seIf-fiequency doubling laser crystal, growth tvin, chemical etching method, transmission synchrotron topography
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