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2005年08月30日

【期刊论文】Ultra Long SiC/SiO2 Core-Shell Nanocables from Organic Precursor

蔡克峰， K. F. Cai， * Q. Lei， and L. C. Zhang

Journal of Nanoscience and Nanotechnology Vol.5, 1-4, 2005，-0001，（）：

-1年11月30日

Ultra long SiC core and SiO2 shell nanocables have been prepared by pyrolysis of poly (dimethyl siloxane) at 1050℃ in ﬂowing Argon. The longest nanocable can be up to at least 6mm. Transmission electron microscopy observations indicate that the diameter of the cores varies from about 3 to 18nm, and the thickness of the outer sheaths varies from about 6 to 45nm and that the cores are crystalline and the sheaths are amorphous. The growth of the nanocables may be governed by a chemical vapor solid process. The nanocables exhibit good photoluminescence property.

SiC,， SiO2,， Nanocables,， Nanostructures,， Poly (， Dimethyl Siloxane)， ,， Pyrolysis,， Crystal Growth,， Chemical Vapor Deposition.，

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2005年08月30日

【期刊论文】THE MICROSTRUCTURE OF (Nb, Ti) C-35Ni (Y2O3) CERMET

蔡克峰， Ke-feng Cai*， Ce-Wen Nan， and Xin-min Min

Meterials Research Bulletin, Vol 32, No.10: pp. 1327-1332, 1997，-0001，（）：

-1年11月30日

摘要

The microstructure of (Nb, Ti) C-35Ni (Y2O3) cermet prepared via hot iso-static pressing (HIP) is observed by transmission electron microscopy (TEM). The mechanism of Y2O3 improving the flexural strength at high temperature of the cermet is suggested and the reasons for no surrounding structure formation in the cermet are explaind.

A.， ceramics,， A,， structural materials,， C.， electron microscopy,， D.， mechanical propertties,， D.， microstructure

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2005年08月30日

【期刊论文】The influence of W2B5 addition on microstructure and thermoelectric properties of B4C ceramic

蔡克峰， Ke-feng Cai*， Ce-Wen Nan

K.-f. Cai, C.-W. Nan/Ceramics International 26(2000)523-527，-0001，（）：

-1年11月30日

摘要

B4C and B4C-W2B5 composite ceramics are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of X-ray diffraction (XRD), electron probe microanalysis (EPMA) and transmission electron microscope (TEM). Their electrical conductivity and Seebeck coe

B.， Microstructure， D.， Boron carbide， Composite ceramic， Thermoelectric properties， Tungsten boride

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2005年08月30日

【期刊论文】The effects of annealing on thermal and electrical properties of reaction-bonded AlN ceramic

蔡克峰， K. F. Cai a， b， c， *， D. S. McLachlan c， G. Sautic， E. Mueller b

K. F. Cai et al./Solid State Sciences 7(2005)945-949，-0001，（）：

-1年11月30日

摘要

An AlN ceramic sample was prepared using a reaction-bonding technique with Al and AlN powders, together with a very small amount of CaO (a sintering aid), as the starting materials. The effects of annealing at 1800℃ for 10 h in one atmosphere of Ar on the thermal and electrical properties of the ceramic were investigated. After annealing the thermal conductivity of the ceramic increased from 55 to 122W/mK, while the AC electrical conductivity, measured as a function of frequency, decreased. The difference in AC electrical conductivity before and after annealing gradually increased as the frequency decreased, reaching about one order of magnitude at 0.01Hz. The composition and microstructure were examined by means of XRD and SEM/EDS. The causes for the improvement in thermal and electrical properties due to the annealing are discussed.

Annealing， Nitrides， Microstructure， Thermal conductivity， Electrical properties

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2005年08月30日

【期刊论文】The effect of titanium diboride addition on the thermoelectric properties of β-FeSi2 semiconductors

蔡克峰， K. F. Cai a， b， *， E. Mueller a， C. Drasar a， C. Stiewe a

K. F. Cai et al./Solid State Communications 131(2004)325-329，-0001，（）：

-1年11月30日

摘要

β-FeSi2-TiB2 composites with various amounts of TiB2, from 0 up to 30 vol%, were prepared by hot pressing. The electrical and thermal conductivities, and the Seebeck coefficient were measured as a function of temperature. The results show that the thermal and electrical transport behavior of the composites is different as the volume fraction of TiB2 is below and above about 0.255. A 5 vol% TiB2 added sample has higher figure of merit than one without TiB2 for temperatures above 650K. The influence of an additional phase, 1-FeSi, formed during the hot pressing, on the thermoelectric properties of the b-FeSi2-TiB2 composites was also discussed.

A.， Semiconductors， D.， Electronic transport， D.， Thermoelectric properties

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