Tiny SiO2 nano-wires (SiO2-NWs) were synthesized on a p-Si (111) wafer by the chemical-vapor-deposition method. The minimum diameter of the nano-wires was around 9nm, and the length was longer than 10μm. The results of transmission electron microscopy shows that the amorphous nano-wires were composed of Si and O with an approximate atomic ratio of 1:2. Furthermore, the photoluminescence behavior of the SiO2-NWs has been also checked.

Tiny silicon nano-wires (SiNWs) were synthesized on silicon wafers by the chemical vapor deposition (CVD) technique. The morphology and structure of tiny SiNWs were analyzed by means of transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The results indicate that the tiny SiNWs were part-crystalline structure and were about 3nm in minimal diameter. Based on the line shift of Raman spectra, the structure transform of the tiny SiNWs was discussed. The defect-inducing growth mechanism will probably provide a new method for the minimum of the one-dimensional nano-materials.

Silicon nanowires (SiNWs) with a diameter of-20nm were synthesized by the thermal evaporation of sulfur powders on silicon wafers. The source of the SiNWs came from the silicon substrates. It is considered that the generated SiS compound assisted the formation of SiNWs. Finally, the Raman shift of SiNWs was discussed.

Array-orderly single-crystal silicon nano-wires were fabricated by the nano-chammel-aluminal and CVD method. The average length and diameter of the nano-wires is about 10mm and 60nm, respectively. A study of the Raman spectrum of the nano-wires shows that the Raman shift to low frequency is due to the quantum confinement effect, which is discussed by using the phonon confinement model. Also we determine the peaks of the Raman spectrum to be corresponding to that of crystal silicon (c-Si).

Ordered silicon nanowires (SiNWs) with single crystal structure were synthesized using nanochannel-Al2O3 (NCA) and the chemical vapor deposition (CVD) method. Firstly, the SiNWs with nearly amorphous structure were fabricated at 500℃; then the SiNWs with crystalline structure were obtained by annealing an as-received sample at 800℃. The average diameter and length of the SiNWs are 40-70nm and 10mm, respectively. The Raman shift related to the crystallization and the amorphous SiNWs was analyzed.