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吴迪, Chen Li, Qinfang Xu, Zheng Wen, Shantao Zhang, Aidong Li, and Di Wu*
Applied Physics Letters,-0001,():
-1年11月30日
Perovskite NdGaO3 (NGO) films, 2–20 unit cells in thickness, have been deposited epitaxially on {001} TiO2-terminated SrTiO3 substrates at different O2 pressures. The {001} NdGaO3/SrTiO3 (STO) interface becomes metallic as the NdGaO3 overlayer is more than 4 unit cells in thickness. The sheet carrier density is above 1013 cm–2 and temperature-independent from 300 down to 7 K. Similar metallic interface has also been achieved in {111} NdGaO3/SrTiO3. Post-annealing in O2 does not change the transport characteristics significantly. These indicate that oxygen vacancies may not have a predominant contribution to the observed interfacial conduction in NGO/STO heterostructures deposited at high oxygen pressure.
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【期刊论文】金属-铁电体-半导体隧道结中的铁电场效应增强电阻
吴迪, Zheng Wen, Chen Li , Di Wu*, Aidong Li and Naiben Ming
Nature Materials,-0001,():
-1年11月30日
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吴迪
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-1年11月30日
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吴迪
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吴迪
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-1年11月30日
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