Carrier dynamics of submonolayer InGaAs/GaAs quantum dots QDs were studied by microphotoluminecence MPL, selectively excited photoluminescence SEPL, and time-resolved photoluminescence TRPL. MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon modes. TRPL reveals shorter recombination lifetimes and longer capture times for the QDs with higher emission energy. This suggests that the smallest SML QDs are formed by perfectly vertically correlated two-dimensional InAs islands, having the highest In content and the lowest emission energy, while a slight deviation from the perfectly vertical correlation produces larger QDs with lower In content and higher emission energy.

测定了亚单层InGaAs/GaAs量子点一量子阱异质结构在5K下的时司分辨光致发光谱亚单层量子点的辐射寿命在500ps至800ps之司，随量子点尺寸的增大而增大，与量子点中激子的较小的横向限制能以及激子从小量子点向大量子点的隧穿转移有关光致发光上升时司强烈依赖于激发强度密度在弱激发强度密度下，上升时司为35ps纵光学声子发射为主要的载流子俘获机理在强激发强度密度下，上升时司随激发强度密度的增加而减小，俄歇过程为主要的载流子俘获机理该结果对理解亚单层量子点器件的工作特性非常有用。

The change of phonon energies of annealed InGaAs/GaAs quantum dots (QDs), was observed using selectively excited photoluminescence. X-ray diffraction and optical anisotropy analysis shows that the QDs' structure mainly changes along the growth direction.

Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour of the peak energy of PL band of the SML QD ensemble are observed and attributed to thermally activated carrier transfer between QDs via QW states.

A vertically correlated submonolayer (VCSML) InAs/GaAs quantum-dot (QD) heterostructure was studied using transmission electron microscopy, high-resolution x-ray diffraction （HRXRD) and polarization-dependent photoluminescence. The HRXRD (004) rocking curve was simulated using the Tagaki-Taupin equations. Excellent agreement between the experimental curve and the simulation is achieved assuming that indium-rich VCSML QDs are embedded in a quantum wel. (QW) with lower indium content and an observed QD coverage of 10%. In the VCSML QDs, the vertical lattice mismatch of the InAs monolayer with respect to GaAs is around 1.4%, while the lattice mismatch in the QW is negligible. The photoluminescence is transverse magnetic-polarized in the edge geometry.