An analytical model for the electric field distribution of positively beveled abrupt p-n juncvtions is presented. Simple expressions for the depletion width at the surface and the maxi-mum field as a function of beveled angle have also been obtained The analytical results show very good agreement compared with those obtained from numerical simulations. By junction and a "differential-mode" abrupt junction, the model is also valid for the case of a dielectric with large permittivity covering the beveled surface.

The effect of the reduction of the peak fild at the deges of reverse-biased p-n junctions by the resistive field pcale (RFP) and varation lateral doping (VLD) is explained with the surface charges induced by their structures. Analytical solutions of the field profile under the RFP and under the CLD were found. From which the optimujm doping profile of the VLD can also be found. The relations between the breakdown voltage and surface depletion width for these two structures are proposed. The realization of the optimum YLD by an approach using multiple multiple zones of the JTE IS to be satisfactory.

Results of some new inventions of voltage sustaining structure for both vertical and lateral power devices are presented. A figure of merit is defined for appreciating the devices which show that the nes devices are much better than the prior arts.

作者山非平衡赴流子的座镇性方程出发，利用热导问题中的格林函数方法。证明了在记号变化的整流小于截止频率时通常电荷控制法的正确性。对于变化更快或要求描写更准确的情形。提出了可以引入一个准定态过程的概念。这时仍可近似地用通常的电荷法。为了推广电荷法，使其更准确，根据准定态概念导出了选用于化速度直到比截止频率高十倍的一个电荷法基本方程。找出了扩散管电荷参量与物理量及几何尺寸间的关系。把结论推广到截止区以及漂移管和二极管的情形。对二极管的计算，初步得到了实验结果的支持。

A united expression for the doping concentration of both p-regious and n-regions of the CB (Composite buffer)-stucture with different pat-terns is derived and used for solving Poisson's equa-tion. The physical parameters are then obtained and can be used to optimize the CB-structure of any pat-tern under a given breakdown voltage.