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【期刊论文】ANALYSIS AND DESIGN GUIDELINES OF JIT'S USED IN PLANAR TECHOLOGY (Invited Paper)
陈星弼, CHEN Xing Bi
,-0001,():
-1年11月30日
Semiconductor power devices have been steadily developed. Devices with breakdown voltage (BV) of kv's and vueeent handling capabilities of KA's have been achieved today. Junction termination techniques (JTT'S) are used in such devices without exemption. It becomesalso important issues in high-voltage and power integrated circuits (HVIC and PIC) [1].
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【期刊论文】An Analytical Model for Electric Field Distribution of Positively Beveled Abrupt Pn Junctions
陈星弼, Xing Bi Chen, Senior Member, IEEE, Johnny K.O.Sin, Min Zhang, and Bin Wang
IEEE FRANSACTIONS ON ELECTRON DEVICES VOL.44 NO.5 MAY 1997,-0001,():
-1年11月30日
An analytical model for the electric field distribution of positively beveled abrupt p-n juncvtions is presented. Simple expressions for the depletion width at the surface and the maxi-mum field as a function of beveled angle have also been obtained The analytical results show very good agreement compared with those obtained from numerical simulations. By junction and a "differential-mode" abrupt junction, the model is also valid for the case of a dielectric with large permittivity covering the beveled surface.
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【期刊论文】A Theory of Flating Field-Limiting Rings Regarding the Effect of Surface Charges
陈星弼, Chen Xingbi
,-0001,():
-1年11月30日
The surface field and the potential distribution of an abrupt planar junction with the FFLR'S is derved derved by making use of cylindric solution of Polsson's equation and Laplace's equation, The design guidelines of the FFLR's system are given, It is shown in this paper that a positive surface charge increases the maximum electric field and the voltage between the rings in p+-n planar junction.
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陈星弼, CHENG Xingbi
,-0001,():
-1年11月30日
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【期刊论文】A Novel High-Voltage Sustaining Structure with Buried Oppositely Doped Regions
陈星弼, Xing Bi Chen, Senior Member, IEEE, Xin Wang. And Johnny K.O.Sin. Senior Member
IEEE TRANSACNORS ON EECTRON DEVICES VOL.47. NO6, JUNE 2000,-0001,():
-1年11月30日
A novel high-voltage sustainings structure with buride oppositely doped regions is dermonstrated. Due to the resistivity andior the thickness of the voltage-sustaing layer can be made smalier than that of a conventional one with the same breakdown voltage, and therefore the on-resistance (of unipolar cnductionl can the re-duced. The theory developed for designing such structures is found to be in good agreement with the results obtained from two-dimen-sional (2D)simulation as well as from experiment. A 500 V VD-MOST using such a structure as the drift region and with proper edge termination is fabricated. Results show that its on-resistance is lower than value given by the conventional "sillcun limil"
Index Terms-Breakdown voltage,, on-resistance,, oppositely doped buride regions., Power transistor,, VDMOST.,
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