A theory of the switching respinse of the CBMOST (OR COOLMOST, or Super Junction device) is proposed based on the physical nd geo-metracal parameters inherent in the voltage sustaining structure. It is proven that the salient feature of such a device is that the storage time in turn-off process is a little longe than the conventional power Most due to its heavier doping. Explanation for the fast turn-on Process DESPITE OF Having an oppositely doped region inside the voltage sustaining layer is also given. It is also shown that if p-(or n-) regions in the CB-sturcture are not directly contacted to the n+(or p+) drain region. Then device is a normally-on one. Measures are proposed for the real device to be not normally-on.

A united expression for the doping concentration of both p-regious and n-regions of the CB (Composite buffer)-stucture with different pat-terns is derived and used for solving Poisson's equa-tion. The physical parameters are then obtained and can be used to optimize the CB-structure of any pat-tern under a given breakdown voltage.

The hexagonal pattern of the voltage-sustaining layer in the COOLMOST with p-region in the center of cach unicell, which produces the lowest specific on-resistance, is studied based on a technologically achievable minimum aspec ratio of the width of each region to the thickness of the voltage-sustaining layer. A breakdown voltage higher than th previouw result is also achieved by breaking the requirement of the different peak fields to be equal. Futhermore, thdoping of the p-region near the drain is modified to get a better result It is believed that this is the new theoretica "Silicon Limit". The results show that a value Of Ron less than 1/3 of the previous one is obtained. Theoretical analysis given and shows in good agreement with the numerical simulation.

The optimized values for the physical and ge-ometrical parameters of the p-and n-regions used in the voltage-sustaining layer of the COLMOSTM2 are presented. Design of the parameters aimed to produce the lowest specific on-resistance. Ron.for a given breakdown vnltage. Vp.A new relationship between the Ron and Vv for the COOLMOSTM IS developed as Ron=cv1.32, where the constant Cis dependent by putting a thin layer of insulator between the p-region and its neighboring n-regions, the value of Ron can be further reduced. The possibilry of incorporating the insulating layer may open up opportunities for practical implementation of the COOLMOSTM fof volume production.

本文讨论了景点生活上注入下晶体管的IC-VBE特性的各种因素，作者发现发射结势区准费米能降落的影响对于解释实验中发现的n-d（Vas/Vr）/d in Tc<1的情况是重要的，文中也给出了精确测量集成晶体管对的n*值的差分方法。