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陈星弼, CHENG Xingbi
,-0001,():
-1年11月30日
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【期刊论文】A Theory of Flating Field-Limiting Rings Regarding the Effect of Surface Charges
陈星弼, Chen Xingbi
,-0001,():
-1年11月30日
The surface field and the potential distribution of an abrupt planar junction with the FFLR'S is derved derved by making use of cylindric solution of Polsson's equation and Laplace's equation, The design guidelines of the FFLR's system are given, It is shown in this paper that a positive surface charge increases the maximum electric field and the voltage between the rings in p+-n planar junction.
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【期刊论文】Optimization of the Drift Region of Power MOSFET's with Lateral Structures and Deen
陈星弼, X.B CHEN, Z. Q. SONG. AND Z. J. JJ
IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL ED-34, NO.11, NOVEMBER 1987,-0001,():
-1年11月30日
The electric field profile in the drift region of power MOSFET's with lateral structures and deep junctions been found analytically. From the analysis, the best uniform surface doping den-sity and the depth of the drift region in offset-gate power Mosfet's that introduces the minimum seies resistance and sustains a given junction breakdown voltage is derived. Design guidelines for such MOSFET's are proposed. The comparison with computer simulation results bas shown that it is reasonable for some practical structures.
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陈星弼
,-0001,():
-1年11月30日
本文探讨了在一个方向是不均匀的媒质中应用镜像法求解恒定电场问题的可能性。得到一个描述镜像的二变量二防线性分方程。对于均匀媒质的情形。方程是常系数的。精合边界条件可以推演出计算电场或电位分布的所有镜象。对于不均匀媒质的情形。方程不是常系数的。这时虽然原则上可以用镜象法。但所需求解的议程和白电流连惯性(导体的电流场问题中)或电位通量连惯性(在电介质的静电电场问题中)缎带出的方程差不多同样复杂面难于计算。
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【期刊论文】Optimum Doping Profile of Power MOSFET Epitaxial Layer
陈星弼, XING-BI CHEN AND CHENMING HU, MEMBER, IEEE
IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. ED. 29. NO.6 JUNE 1982,-0001,():
-1年11月30日
The epitaxial layer resistance of a Mosfet can be slightly reduced by using an oprimum doping protile. Which exhibits a mini-mum in the upper half of the layer when the layer thickness is large compared to the cell-to-cell spacing. A gradual transition from the nepitaxial layer to the n+ subsuase is desirable. When conent spreading is significant. The resistance may rise ad V52 rather than Vb25.
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