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李明伟, LIU Chun-mei, LI Ming-wei, CHEN Huai-jie
材料科学与工程学报,2005,23(4):546~549,-0001,():
-1年11月30日
采用有限元法对LEC法生长的3英寸GaAs单晶中的热应力进行求解。假设晶体为轴对称的各向同性线弹性体。主要讨论了不同液封厚度、轴向磁场强度以及晶体转速下的流动和传热所对应的晶体中的热应力分布,同时也考察了界面形状对应力的影响。
LEC法, 热应力, GaAs单晶
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【期刊论文】Oxygen-transport phenomena in a small silicon Czochralski furnace
李明伟, You-Rong Li a, Ming-Wei Li a, Nobuyuki Imaishi b, *, Yasunobu Akiyama b, Takao Tsukada c
Journal of Crystal Growth 267(2004)466-474,-0001,():
-1年11月30日
In order to understand the basic characteristics of the gas-phase mass-transfer coefficient (kg) in a small silicon Czochralski (Cz) furnace, a very crude model was proposed and the results were correlated by the Sherwood number as a function of Reynolds number. It was confirmed that by installing a gas guide in the hot zone, the mass transfer coefficient was significantly enhanced. A set of global analyses of small Cz furnaces was conducted with different values of diffusivity of SiO in the gas phase (DSiO) and of oxygen in the melt phase (DO) in order to elucidate which rate process controls the average oxygen concentration ([O]ave) in the grown crystal. These simulations revealed that in these small Cz furnaces, [O]ave is dependent on the gas phase mass transfer rate and melt flow patterns. A decrease in DSiO causes an increase in [O]ave. An increase in DO tends to increase [O]ave slightly in most cases.
A1., Computer simulation, A1., Fluid flow, A1., Heat transfer, A1., Mass transfer, A2., Czochralski method, B2., Diffusivity, B2., Finite-element method, B2., Oxygen transport, B2., Semiconducting silicon
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【期刊论文】Global simulation of a silicon Czochralski furnace
李明伟, Mingwei Li a, YourongLi a, Nobuyuki Imaishi a, *, Takao Tsukada b
Journal of Crystal Growth 234(2002)32-46,-0001,():
-1年11月30日
To understand the characteristics of the Czochralski (Cz) furnace for the single-crystal growth of silicon, a set of global analyses of momentum, heat and mass transfer in small Cz furnaces (crucible diameter: 7.2cm, crystal diameter: 3.5cm, operated in a 10 Torr argon flow environment) is carried out using the finite-element method. The global analysis assumes a pseudosteady axisymmetric state with laminar flow, equilibrium relations at the melt/silica interface and vapor-liquid chemical equilibrium at the melt/gas interface, as well as the segregation coefficient of unity at the melt/crystal interface. Convective and conductive heat transfers, radiative heat transfer between diffuse surfaces and the Navier-Stokes equations for gas and melt phases are all combined and solved together. Thus, the velocities and temperatures obtained are used to calculate the oxygen concentrations. The global analysis code is effectively used to discuss the influences of the Marangoni effect and a gas guide (or a heat shield) placed between the crucible and the crystal. The results indicate that the gas guide reduces the heater power and changes the melt flow pattern and oxygen transport. The melt flow pattern is strongly dependent on the Marangoni effect and gas flow near the surface, and changes the oxygen concentration significantly. This analysis reveals the importance and effectiveness of global analysis.
A1., Computer simulation, A1., Fluid flows, A1., Heat transfer, A1., Mass transfer, A2., Czochralski method, B2., Semiconducting silicon
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【期刊论文】Suppression of Marangoni convection of silicon melt by a non-contaminating method
李明伟, Jie Li a, Mingwei Li a, *, Wenrui Hu b, Danling Zeng a
International Journal of Heat and Mass Transfer 46(2003)4969-4973,-0001,():
-1年11月30日
A set of numerical simulation of the effect of the gas shearing flow over a silicon melt free surface on Marangoni convection under microgravity condition was conducted by using finite element method. For given gas channel width, Marangoni number and aspect ratio a remarkable reduction of Marangoni convection in silicon liquid bridge can be achieved by choosing the optimal gas velocity in accordance with the correlation proposed in the paper. The effectiveness of the reduction of the gas flow under different conditions shows that, in some cases, Marangoni convection reduction of 99% can be realized by this non-contaminating method.
Marangoni convection, Silicon, Non-contamination method, Finite-element method
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【期刊论文】Numerical investigation of FZ-growth of GaAs with encapsulant
李明伟, Mingwei Li a, *, Wenrui Hu b, Shuxian Chen a
International Journal of Heat and Mass Transfer 47(2004)2941-2947,-0001,():
-1年11月30日
Numerical simulation of flow and heat transfer for a 3 in. (0.075m) diameter liquid encapsulant full float zone (LEFZ) growth of single-crystal GaAs was conducted using the finite-element method. Convective and conductive heat transfers, radiative heat transfer between diffuse surfaces and the Navier–Stokes equations for both melt and encapsulant as well as the interface position are all combined and solved simultaneously. The effect of the thickness of encapsulant, rotation rate of crystal and feed rod on the flow and heat transfer as well as on the growing and melting interface shape were investigated.
Liquid encapsulant full float zone, GaAs, Boron oxide, Finite-element method
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