Process design and simulation of SiC based CMOS circuits

• 1、School of Integrated Circuit, Dalian University of Technology, Dalian 116000,

Abstract：This article provides a detailed description of the process design and simulation process of SiC CMOS inverter circuits, explaining the significant differences in process between SiC CMOS and traditional silicon devices. NMOS and PMOS are designed using TCAD software. Physical models such as band narrowing, recombination, mobility, and anisotropy are introduced in TCAD simulation. It focuses on the necessary physical models for SiC device simulation, including non-complete ionization and interface states. It also analyzes in detail the impact of these models on device and inverter circuit simulation results, providing more accurate simulation data for device design and optimization..

Keywords： IC SiC TCAD model CMOS