氧化镓忆阻器制备及其光电突触仿生探索
首发时间:2024-04-29
摘要:随着人工视觉系统的发展,基于忆阻器的光电突触器件正逐渐受到人们的关注。与传统的电学突触器件不同,光电突触利用光照来调节突触的权重,它要求材料同时具备阻变特性与光响应特性。氧化镓具有4.4eV-5.2eV的超宽带隙,可通过深紫外线信号激活突触器件,在对日盲光敏感的光电突触的研究领域拥有先天的优势。本文使用化学气相沉积法(CVD)在c面蓝宝石衬底上生长了高结晶质量的氧化镓薄膜,采用氮气等离子体处理的手段,对氧化镓薄膜进行了选区电学调控,基于该方法制备了氧化镓i-n同质结型忆阻器。氧化镓同质结忆阻器的电阻窗口(HRS/LRS)约为10,具有良好的重复性与阻值稳定性。基于氧化镓同质结忆阻器的日盲光响应和记忆能力,模拟了器件作为光电神经突触的仿生行为。在254nm光照的作用下,器件成功实现了多种基本的突触功能,包括长短时程突触可塑性、双脉冲易化、经验式学习行为等。器件对日盲光照的记忆行为源于氧空位对光生空穴的捕获和释放所造成的持续光电导现象。
关键词: 微电子学与固体电子学 氧化镓 化学气相沉积 忆阻器 光电突触
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Preparation And Bionic Exploration As Optoelectronic Synapse Of Memristors Based On Gallium Oxide
Abstract:With the development of artificial vision systems, optoelectronic synaptic devices based on memristors are gradually receiving attention. Unlike traditional electrical synaptic devices, optoelectronic synapses use light to adjust the weight of synapses, requiring materials to possess both resistive swithcing characteristics and photoresponsive properties. Gallium oxide has an ultra wideband gap of 4.4eV-5.2eV, which can activate synaptic devices through deep ultraviolet signals. It has inherent advantages in the research field of optoelectronic synapses sensitive to solar-blind ultraviolet. In this article, gallium oxide was grown using chemical vapor deposition (CVD) with high crystalline quality on c-plane sapphire substrates. Selective area electrical control of the gallium oxide thin films was performed by nitrogen plasma treatment. Based on this method, gallium oxide i-n homojunction memristors were prepared. The resistance window (HRS/LRS) of gallium oxide homojunction memristors is about 10, indicating good repeatability and resistance stability. Based on the solar-blind ultraviolet response and memory ability of gallium oxide homojunction memristors, the biomimetic behavior of the device as an optoelectronic neural synapse was simulated. Under 254nm light exposure, the device successfully demonstrates a variety of basic synaptic functions, including long-term and short-term synaptic plasticity, paired-pulse facilitation, and experiential learning behavior. The memory behavior of devices towards solar-blind ultraviolet is attributed to the continuous photoconductivity effect caused by the trapping and release of photogenerated carriers by oxygen vacancies.
Keywords: Microelectronics and Solid State Electronics Gallium Oxide CVD Memristor Optoelectronic Synapse
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