Study of High-temperature Schottky Barrier Diodes based on β-gallium oxide

• 1、School of Integrated Circuits, Dalian University of Technology, Dalian 116620

Abstract：Electronic power devices are widely researched and applied nowadays due to the high voltage resistance, high power and fast switching performance. With the exploration of deep space exploration, military developments, fire prevention and other fields, the study of power devices that can work stably in high temperature and harsh environments has become an important topic. In this paper, two structures of Schottky barrier diodes, vertical and horizontal, were prepared based on gallium oxide, and the electrical characteristics of the devices under forward and reverse bias were investigated in high temperature environment. The devices show good rectification characteristics, with forward turn-on voltage less than 1 V at high temperature, and reverse breakdown voltage up to -189 V at 500 K. The devices show acceptable forward turn-on characteristics and reverse breakdown resistance, and the high temperature induces changes of the carrier energy, Schottky barrier width, and impurity scattering of the devices, which leads to a decrease in the forward Von and an increase in the Ron of the devices as the temperature rises. Meanwhile, the high temperature also increases the reverse leakage currents of the devices, which ultimately leads to the premature breakdown phenomenon where the breakdown voltage of the device decreases with increasing temperature.)

Keywords： Microelectronics and Solid State Electronics Gallium oxide Schottky barrier diode Rectification characteristics High temperature