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期刊论文

Atomic-Scale Kinetic Monte Carlo Simulation of {100}-Oriented Diamond Film Growth in C-H and C-H-Cl Systems by Chemical Vapour Deposition

安希忠AN Xi-Zhong ZHANG Yu LIU Guo-Quan QIN Xiang-Ge WANG Fu-Zhong LIU Sheng-Xin

CHIN.PHYS.LETT. Vol. 19, No. 7 (2002) 1019,-0001,():

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摘要/描述

We simulate the {100}-oriented diamond f/lm growth of chemical vapour deposition (CVD) under different models in C-H and C-H-Cl systems in an atomic scale by using the revised kinetic Monte Carlo method. The simulation results show that: (1) the CVD diamond film growth in the C-H system is suitable for high substrate temperature, and the film surface roughness is very coarse; (2) the CVD diamond film can grow in the C-H-Cl system either at high temperature or at low temperature, and the film quality is outstanding; (3) atomic Cl takes an active role for the growth of diamond film, especially at low temperatures. The concentration of atomic Cl should be controlled in a proper range.

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