Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature —Part II Simulation of CVD diamond film growth in C-H system and in Cl-containing systems，成果详细信息-中国科技论文在线

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Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature —Part II Simulation of CVD diamond film growth in C-H system and in Cl-containing systems

安希忠， Xizhong An ， Yu Zhang ， Guoquan Liu ， Xiangge Qin ， FuZhong Wang ， Shengxin Liu

Journal of University of Science and Technology Beijing Volume 9, Number 6, December 2002, Page 453-457，-0001，（）：

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摘要/描述

The growth of {100}-oriented CVD diamond film under two modifications of J-B-H model at low substrate temperatures was simulated by using a revised KMC method at atomic scale. The results were compared both in Cl-containing systems and in C-H system as follows: (1) Substrate temperature can produce an important effect both on film deposition rate and on surface roughness; (2) Aomic Cl takes an active role for the growth of diamond film at low temperatures; (3) {100}-oriented diamond film cannot deposit under single carbon insertion mechanism, which disagrees with the predictions before; (4) The explanation of the exact role of atomic Cl is not provided in the simulation results.

关键词: CVD diamond film ， atomic Cl ， revised KMC ( ， Kinetic Monte Carlo) ， method ， atomic scale simulation

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