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陈培毅
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期刊论文
An ultrahigh vacuum chemical vapor deposition system and its application to growth of nMOSFET and HBT structures
Vacuum 59(2000)927-931，-0001，（）：
An ultrahigh vacuum chemical vapor deposition system suitable for deposition of epitaxial GeSi layers has been constructed. Its reaction chamber is a rectangular quartz tube that is heated by a graphite heater. Using this system, two high-quality structures of Si/Ge0.18 Si0.82/GexSi1-x/Si nMOSFET and n-Si/p+-Ge0.2 Si0.8/n-Si HBT with controllable doping were successfully grown at 600 and 550℃.
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