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Novel strained Siyrelaxed SiGe channel PMOSFETs
Thin Solid Films 409(2002)112-115,-0001,():
Due to the high hole mobility both in the surface strained Si and buried relaxed SiGe channels, we successfully fabricated a novel strained Siyrelaxed SiGe channel PMOSFET on the heterostructure strained Siyrelaxed SiGeystrained Siyrelaxed SiGe buffer layerygrading Si Ge layer, grown by home-made UHVyCVD system, which is commonly used in 1yx x the 'buried' SiGe NMOSFET.This device is easier to integrate with SiGe NMOSFET to form SiGe CMOS, than strained SiGe channel PMOSFET. Then the process is presented. With Vgs=3.5V, the maximum saturated transconductance is found to be twice as large as that of the control Si PMOS, and approximates to that of a traditional strained SiGe channel PMOS.
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