To realize the hole-mediated ferromagnetism, manganese and nitrogen-codoped ZnO(Zn1-xMnxO:N) films were prepared on sapphire (0001) by reactive radio-frequency (rf) magnetron sputtering from Zn0.97Mn0.03O ceramic targets using N2 gas. X-ray photon spectra reveal that the doped Mn ions are mainly in divalent states and the coexistence of O-Zn and N-Zn bonds in the films. According to the absorption spectra, the band gap of Zn0.97Mn0.03O: N films is about 3.15eV, which is slightly lower than that of ZnO films (3.20eV). Compared with Zn0.97Mn0.03O films, ferromagnetic behavior of Zn0.97Mn0.03O: N films were significantly changed with a coercivity of about 70 Oe, a saturation magnetization of 0.92μB/Mn2) and a remanance over 0.15μB/Mn2) at 300K, while at 10K, they increased to be about 110 Oe, 1.05μB/Mn2) and 0.23μB/Mn2), respectively. However, rapid thermal annealing treatment in pure oxygen results in a significant decrease on the magnetic properties of the films.