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期刊论文
InP/InGaAs resonant cavity enhanced photodetector and light emitting diode with external mirrors on Si
ELECTRONICS LETTERS 1st September 1994 Vol. 30 No.18，-0001，（）：
Epitaxial lift-off (ELO) techniques were employed in the fabrication of lnP/InGaAs vertical surface light emitting diodes and resonant cavity enhanced photodetectors on Si. External mirrors were employed consisting of Si/SiO2 quarter wave dielectric stacks. The main peak in the emission spectrum of the fabricated device has an FWHM of 8nm. The spectral response of the photodetector shows wavelength selectivity, and with an lnGaAs absorbing layer only 0.1μm thick a peak quantum efficiency of 0.48 was obtained in the 1.5μm spectral region.
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