Based on silicon on insulator (SOI) technology, a novel high temperature pressure sensor with high frequency response is designed and fabricated, in which a buried silicon dioxide laycu in the silicon material is developed by the separation by implantation of oxygen (SIMOX) techonology. This layer can isolate leak currents between the top silicon layer for the detecting circuit and body silicon at a tcnpcratuec of about 200℃. In addition, the tcchnology of silicon and glass bonding is used to create a package of the sensor without internal strain. A structural model and test data from the sensor are presented. The experimental rcsults showed that this kind of sensor posscsscs good static performance in a high temperature environment and high frequency dynamic characteristics, which may satisfy the pressure measurement demands of the oil industry, aviation and space, and so on.