Two types of threading dislocations with edge components were investigated by a high-resolution transmission electron microscope in undoped GaN epilayers grown on Al2O3 substrates. One is a fully filled core with regular contraction and stretch of bright dots, and the other is incompletely filled with one bright dot less and irregular contraction and stretch of bright dots. The bright dots were distorted and degenerated into bright line segments at cores in areas with smaller local dislocation intervals. The calculated results suggested that the distorted bright regions are attributable to the glide and/or climb caused by nearby dislocation interactions.