On self-assembled InxGa12xAs/GaAs(311)B quantum dots (QD's), photocurrent in the plane of QD arrays was measured under irradiation with wavelengths longer than 850 nm (1.46 eV). A sample with rather inhomogeneous QD sizes shows hopping conduction, indicating the localization of carriers in individual QD's. A two-dimensional QD superlattice, consisting of highly ordered and homogeneously sized QD's, exhibits negative differential conductance (NDC), i.e., photocurrent decrease with increasing applied voltage, in a limited electric-field range. The pre-NDC conduction is argued to arise from the miniband, which is evidenced by the photoluminescence, while the post-NDC conduction is found to be hopping as in a localized QD system, suggesting a miniband destruction under an in-plane electric field as low as～103Vcm-1. The miniband transport is likely controlled by two-dimensional acoustic-phonon scattering.