Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary region were deposited onto Pt(111)/Ti/SiO2/Si(100) substrates using a sol-gel method. A seeding layer was introduced between the most underlying surface of the PZT film and the platinum electrode surface to control the texture of the PZT thin film. The lead oxide seeding layer resulted in the formation of a single-phase perovskite and absolutely (100)-textured PZT film. SEM, XRD, XPS, and AES were used to characterize the evolution of the lead oxide layer and the PZT thin films. The growth kinetic mechanism of the (100)-textured PZT thin films was proposed phenomenologically. The ferroelectric and piezoelectric properties of the PZT films were also evaluated and discussed in association with different preferential orientations.