Biaxially textured yttria-stabilized zirconia (YSZ) films were grown on mechanically polished Hastelloy C276 (HC) substrates by ion-beamassisted deposition and electron-beam evaporation. The surface root-mean-square (RMS) roughness of the polished HC substrates was ≈3 nm, as measured by atomic force microscopy (AFM). A water-cooled sample stage was used to hold the substrate temperature below 100◦C during deposition. RMS roughness of≈3.3 nm was measured on the deposited YSZ films by AFM. X-ray pole figures were conducted for texture analysis; in-plane texture measured from YSZ (111) φ-scan FWHM was 13.2℃ and out-of-plane texture from the YSZ (002) ω-scan FWHM was 7.7℃. An≈10 nm thick CeO2 buffer layer was deposited on the YSZ film at 800℃ before YBCO films were ablated by pulsed laser deposition at 780℃ in a 250 mTorr flowing oxygen environment. Good in-plane texture with FWHM≈7℃was observed in YBCO films. Tc=90K, with sharp transition, and transport Jc of≈2.2 ×106 A cm−2 were observed in a 0.5μm thick, 5mmwide, and 1cm long sample at 77K in self-field.