A modified sol–gel method was used to fabricate (Pb0.25Ba0.15Sr0.6)TiO3 (PBST) thin films from the precursorsolution with 0, 10 and 27V% (volume percent) 2-methoxyethanol on a Pt/Ti/SiO/Si substrate. The structural anddielectric properties of PBST thin films were investigated as a function of 2-methoxyethanol concentration in theprecursor solution. XRD and SEM analysis showed that we can get pure PBST perovskite phase and relative finedensity thin films with smooth surface only using proper concentration (10V%) of 2-methoxyethanol in the precursorsolution. Furthermore, the thin film deposited from precursor with 10V% 2-methoxyethanol has the highest dielectricconstant of 931 and the least loss factor of 0.031 and its tunability and figure of merit (FOM) are 76% and 24.1%,respectively. The results show that the structural and dielectric properties of PBST thin films are strongly dependent onthe 2-methoxyethanol in the precursor solution.