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期刊论文

Ground state splitting of vertically stacked indium arsenide self-assembled quantum dots

李树玮Shuwei Li a) Kazuto Koike

VOLUME 81, NUMBER 19 APPLIED PHYSICS LETTERS 4 NOVEMBER 2002,-0001,():

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摘要/描述

An attractive feature of vertically stacked InAs/AlGaAs quantum dots (QDs), which were buried in AlGaAs high potential barrier and spacer epilayer and grown by molecular-beam epitaxy with size-controlled growth, exhibits an unknown macroscopic quantum phenomenon (i.e., phase-change splitting of the ground state). In the vertically aligned QDs, due to many-body effect and quantum-mechanical renormalization, the electron ground state splits into a series of peaks of which the intensity gradually, systematically decreases to redshift direction with a wavelength constant. By the way, energy levels of electrons and holes might really be "seen" by deep level transient spectroscopy to which the photoluminescence experiment is in an excellent agreement.

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