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刘彩池
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期刊论文
Fast neutron irradiation for Czochralski grown silicon
Appl. Phys. Lett., Vol. 65, No.22, 28 November 1994，-0001，（）：
In this investigation, Czochralski grown silicon (CZ-Si) was irradiated by a fast neutron which can introduce irradiated defects into silicon and change the quality and density of point defects in silicon, by the interaction between irradiated defects and oxygen, the controlled precipitation of oxygen, and an excellent intrinsic gettering structure in CZ-Si during heat treatment cycles can be obtained easily.
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