Sn-doped (Ba, Sr) TiO3 (BSTS) thin films have been deposited on highly (200) oriented LaNiO3 (LNO) thin films by sol-gel method. The atomic force microscope (AFM) images exhibited that the dopant Sn did not decrease the crystalline grain size of BST thin films. The structure of the BST film, determined by X-ray diffraction (XRD), presented the higher intensity (110) and (200) peaks, while the latter was distinctly induced by LNO layer. Evidently, Sn-doped BST thin films on LNO/Si substrate were found to decrease the dielectric constant and the dielectric loss, which is favourable to potentially improve the figures of merits (FD) of pyroelectric materials. The BSTS thin films on LNO layer also displayed an excellent leakage current property comparing with the BST thin film on Pt/Ti/SiO2/Si and LNO/Si substrates.