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刘治国
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期刊论文
Drift mobility of semiconductive La0.5Sr0.5CoO3 films measured using the traveling wave method
Appl. Phys. Lett., Vol. 76, No.5, 31 January 2000，-0001，（）：
The conductivity and the drift mobility of La0.5Sr0.5CoO3 films deposited on fused silica substrates at 650℃ by pulsed-laser deposition have been measured by using the traveling-wave method. At room temperature, La0.5Sr0.5CoO3 films with semiconductivity have a hole density of 1 31021cm23, and drift mobility of 0.01cm2/V s. The films underwent a paraferromagnetic transition around 240K. The hopping process and tunneling effect of small polarons may be responsible for the conductive behavior above the Curie temperature.
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