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期刊论文
Electrical properties of contacts on P-type Cd0.8Zn0.2Te crystal surfaces
Nuclear Instruments and Methods in Physics Research A 448(2000)581-585，-0001，（）：
In this paper effects of surface treatments of p-type Cd0.8Zn0.2Te devices were studied by Atomic Force Microscopy (AFM), Ⅰ-Ⅴ measurements, and electrical properties as well as different contact technologies using Au, Al, In and electroless Au. It is shown that electroless Au film deposited by the chemical method can form a heavily doped p+ layer on a smooth surface, which is nearly ohmic on p-type material. Electroless Au gives better contact than evaporated Au, Al or In. A post-annealing treatment of electroless Au film improves the ohmic quality of contacts and enhances the adhesion between contact layer and the Cd0.8Zn0.2Te crystal surface.
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