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期刊论文

Novel high-brightness tunneling-regenerated multi-activeregion AlGaInP light-emitting diode

沈光地GUO Xia SHEN Guangdi WANG Guohong WANG Xuezhong DU Jinyu GAO Guo & Kang L. Wang

SCIENCE IN CHINA (Series E), Apnil 2003, Vol. 46 No.2,-0001,():

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摘要/描述

In order to resolve the prevailing problems in conventional light-emitting diodes (LEDs), novel high-efficiency tunneling-regenerated multi-active-region (TRMAR) LEDs are proposed, which have such advantages as low heat generation, carrier overflow level and non-radiation recombination rate and whose quantum efficiency and the output optical power can be scaled with the number of the active regions. Experiments show that the on-axis luminous intensity of TRMAR LEDs increases linearly with the number of active regions. The novel LEDs have high quantum efficiency under low current injection and their maximum on-axis luminous intensity exceeds 5 candelas at 20 mA current injection at the peak wavelength of 625nm with a 15

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